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B.S. Li
Researcher at Chinese Academy of Sciences
Publications - 10
Citations - 164
B.S. Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Transmission electron microscopy & Annealing (metallurgy). The author has an hindex of 7, co-authored 10 publications receiving 126 citations. Previous affiliations of B.S. Li include Southwest University of Science and Technology.
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Journal ArticleDOI
6H-SiC blistering efficiency as a function of the hydrogen implantation fluence
TL;DR: In this article, the fraction of the implanted fluence used to pressurize blister cavities was deduced by combining experimental results with Finite Element Method (FEM) modeling.
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Study of the damage produced in 6H-SiC by He irradiation
TL;DR: In this paper, the authors investigated the lattice damage and evolution in 6H-SiC wafers under He + ion irradiation by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV visible spectrograms and transmission electron microscopy (TEM).
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Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC
B.S. Li,Ying Du,Z.G. Wang,K.F. Wei,Hong Zhang,Cunfeng Yao,Hailong Chang,Jin Sun,Minghuan Cui,Yanbin Sheng,Lilong Pang,Y.B. Zhu,X. Gao,Peng Luo,Huiping Zhu,Jianlu Wang,D. Wang +16 more
TL;DR: The formation of He bubbles observed in the hot-pressed polycrystalline SiC samples implanted with 230-keV He ions with fluences ranging from 5-10 15/cm 2 to 1-×-10 17 /cm 2 at room temperature and subsequently annealed at 1000-°C for 30min was investigated in this article.
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Recrystallization of He-ion implanted 6H-SiC upon annealing
TL;DR: In this paper, the authors investigated the recrystallization process of amorphous 6H-SiC created by 15-keV He ion implantation to doses of 15-10 16, 5-15 16, and 1-×-10 17 ǫ −2 at room temperature (RT) followed by annealing ranging from 600-°C to 900-degree for 30min.
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Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
B.S. Li,Zujian Wang,Hong Zhang +2 more
TL;DR: In this paper, the authors investigated the mechanisms of ion-cut in H2+-implanted GaN by analyzing microstructural features of H2-implants at room temperature, 573 K and 723 K.