Journal ArticleDOI
Study of the damage produced in 6H-SiC by He irradiation
TLDR
In this paper, the authors investigated the lattice damage and evolution in 6H-SiC wafers under He + ion irradiation by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV visible spectrograms and transmission electron microscopy (TEM).About:
This article is published in Vacuum.The article was published on 2011-11-11. It has received 33 citations till now. The article focuses on the topics: Raman spectroscopy & Annealing (metallurgy).read more
Citations
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Journal ArticleDOI
The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen
TL;DR: The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and fluences is investigated by using various experimental techniques in this article, where the authors found that both migration and coalescence are energetically cheaper in the case of H compared to He.
Journal ArticleDOI
Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC
B.S. Li,Ying Du,Z.G. Wang,K.F. Wei,Hong Zhang,Cunfeng Yao,Hailong Chang,Jin Sun,Minghuan Cui,Yanbin Sheng,Lilong Pang,Y.B. Zhu,X. Gao,Peng Luo,Huiping Zhu,Jianlu Wang,D. Wang +16 more
TL;DR: The formation of He bubbles observed in the hot-pressed polycrystalline SiC samples implanted with 230-keV He ions with fluences ranging from 5-10 15/cm 2 to 1-×-10 17 /cm 2 at room temperature and subsequently annealed at 1000-°C for 30min was investigated in this article.
Journal ArticleDOI
He-vacancy interaction and multiple He trapping in small void of silicon carbide
Ruihuan Li,Ruihuan Li,Wenbo Li,Chong Zhang,Pengbo Zhang,Hongyu Fan,Dongping Liu,Levente Vitos,Jijun Zhao +8 more
TL;DR: In this paper, the authors explored the microscopic mechanism of He trapping in vacancies and voids, and explored He-vacancy interactions in He n Va m (Va for vacancy) clusters (n, m, = 1-4) and multiple He traps in a 7-atom void of silicon carbide (SiC).
Journal ArticleDOI
Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000℃
Bingsheng Li,Bingsheng Li,Huiping Liu,Tielong Shen,Lijun Xu,Jie Wang,Fuqiang Zhao,Dingping Peng,Junhan Li,Yanbin Sheng,Anli Xiong +10 more
TL;DR: In this article, the effect of high-temperature helium irradiation on microstructural evolution of 3C-SiC wafers was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscope (HRTEM).
Journal ArticleDOI
Efficient ion-slicing of InP thin film for Si-based hetero-integration.
Lin Jiajie,Tiangui You,Mao Wang,Kai Huang,Shibin Zhang,Qi Jia,Min Zhou,Wenjie Yu,Shengqiang Zhou,Xi Wang,Xin Ou +10 more
TL;DR: A kinetics analysis of the thermally activated blistering process suggests that the sequential implantation of He and H ions can reduce the InP thin film splitting thermal budget dramatically.
References
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Book
The stopping and range of ions in solids
J.P. Biersack,James F. Ziegler +1 more
TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Journal ArticleDOI
Raman Investigation of SiC Polytypes
TL;DR: In this article, the plasmon LO-phonon coupled modes whose spectral profiles are used to evaluate the carrier concentration and mobility of SiC crystals are discussed, and anisotropic electronic properties of α-SiC and characteristics of heavily doped crystals are also treated.
Journal ArticleDOI
Progress in silicon carbide semiconductor electronics technology
TL;DR: In this article, the authors present the present status of SiC-based semiconductor electronics and identify areas where technological maturation is needed and the prospects for resolving these obstacles are discussed.
Journal ArticleDOI
Silicon carbide: Synthesis and processing
TL;DR: In this paper, the authors summarized some aspects of crystal growth and processing and discussed arising problems in the process of crystallizing silicon carbide, a material of choice for special optoelectronic and electronic devices working under extreme conditions.