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Baojie Yan

Researcher at Chinese Academy of Sciences

Publications -  241
Citations -  3796

Baojie Yan is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Nanocrystalline silicon & Silicon. The author has an hindex of 28, co-authored 227 publications receiving 3067 citations. Previous affiliations of Baojie Yan include University of Utah & Nankai University.

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An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/ n- Silicon Heterojunction

TL;DR: The results demonstrate that the expanded CSM enables a more precise extraction, a better preparation technology compatibility, and a wider range of application, compared to TLM.
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On the bandgap of hydrogenated nanocrystalline silicon intrinsic materials used in thin film silicon solar cells

TL;DR: In this paper, the authors present optical and electrical measurements of bandgap of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells as a function of temperature.
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Highly efficient charge transfer in nanocrystalline Si:H solar cells

TL;DR: In this paper, the authors demonstrate that in nanostructured films of nanocrystalline silicon imbedded in a hydrogenated amorphous silicon matrix, carriers generated in the amorphus region are transported out of this region and therefore do not recombine in the polysilicon phase, and propose the use of similar structures to increase the open circuit voltages in solar cell devices.
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On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

TL;DR: In this paper, the authors carried out a systematic study on the passivation quality of poly-Si/SiOx bi-layers on c-Si wafers and concluded that the field passivation appears immediately after the crystallization, and an effective hydrogenation improves the passivating quality further.
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UV-Raman scattering of thin film Si with ultrathin silicon oxide tunnel contact for high efficiency crystal silicon solar cells

TL;DR: In this paper, the authors used a wide range of UV-Raman spectroscopy to measure the crystalline structure and chemical bonding configurations in the TOPCon structure and provided a set of measurements on the samples made with the same layer structure but at different annealing temperatures.