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Bastian Galler
Researcher at Osram Opto Semiconductors GmbH
Publications - 35
Citations - 1073
Bastian Galler is an academic researcher from Osram Opto Semiconductors GmbH. The author has contributed to research in topics: Quantum well & Light-emitting diode. The author has an hindex of 17, co-authored 33 publications receiving 965 citations.
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Journal ArticleDOI
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
Manfred Binder,Anna Nirschl,Roland Zeisel,Thomas Hager,Hans-Juergen Lugauer,Matthias Sabathil,Dominique Bougeard,Joachim Wagner,Bastian Galler +8 more
TL;DR: In this article, the authors report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn),N QWs.
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Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes
Dario Schiavon,Dario Schiavon,Michael Binder,Matthias Peter,Bastian Galler,Philipp Drechsel,Ferdinand Scholz +6 more
TL;DR: The recombination rate coefficients (RRCs) A, B, and C in MOVPE-grown single-quantum-well light emitting diodes spanning the entire blue green spectral range are determined by fitting efficiency curves and differential carrier lifetimes as mentioned in this paper.
Journal ArticleDOI
Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
Bastian Galler,Philipp Drechsel,R. Monnard,Patrick Rode,P. Stauss,S. Froehlich,Werner Bergbauer,Michael Binder,Matthias Sabathil,Berthold Hahn,Joachim Wagner +10 more
TL;DR: In this article, a single quantum well active layer is used to ensure a well-defined active volume which enables the precise determination of the recombination coefficients in the ABC rate model for different emission wavelengths and junction temperatures.
Journal ArticleDOI
Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
M. Auf der Maur,Bastian Galler,Ines Pietzonka,Martin Strassburg,Hans-Juergen Lugauer,A. Di Carlo +5 more
TL;DR: Based on numerical simulation and comparison with measured current characteristics, the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model.
Journal ArticleDOI
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
Felix Nippert,Sergey Yu. Karpov,Gordon Callsen,Bastian Galler,Thomas Kure,Christian Nenstiel,Markus R. Wagner,Martin Dr. Straßburg,Hans-Jürgen Lugauer,Axel Hoffmann +9 more
TL;DR: In this paper, temperature-dependent recombination coefficients were obtained by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes.