Research into terahertz technology is now receiving increasing attention around the world, and devices exploiting this waveband are set to become increasingly important in a very diverse range of applications. Here, an overview of the status of the technology, its uses and its future prospects are presented.

Cutting-edge terahertz technology

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Terahertz semiconductor-heterostructure laser

Terahertz semiconductor heterostructure laser

Physical Review B

The emerging field of nanophotonics1 addresses the critical challenge of manipulating light on scales much smaller than the wavelength. However, very few feasible practical approaches exist at present. Surface plasmon polaritons2,3 are among the most promising candidates for subwavelength optical confinement3,4,5,6,7,8,9,10. However, studies of long-range surface plasmon polaritons have only demonstrated optical confinement comparable to that of conventional dielectric waveguides, because of practical issues including optical losses and stringent fabrication demands3,11,12,13. Here, we propose a new approach that integrates dielectric waveguiding with plasmonics. The hybrid optical waveguide consists of a dielectric nanowire separated from a metal surface by a nanoscale dielectric gap. The coupling between the plasmonic and waveguide modes across the gap enables ‘capacitor-like’ energy storage that allows effective subwavelength transmission in non-metallic regions. In this way, surface plasmon polaritons can travel over large distances (40–150 µm) with strong mode confinement (ranging from λ2/400 to λ2/40). This approach is fully compatible with semiconductor fabrication techniques and could lead to truly nanoscale semiconductor-based plasmonics and photonics. Xiang Zhang and colleagues from the University of California, Berkeley, propose a new approach for confining light on scales much smaller than the wavelength of light. Using hybrid waveguides that incorporate dielectric and plasmonic waveguiding techniques, they are able to confine surface plasmon polaritons very strongly over large distances. The advance could lead to truly nanoscale plasmonics and photonics.

/pdf/a-hybrid-plasmonic-waveguide-for-subwavelength-confinement-3aah5h2zn4.pdf

A hybrid plasmonic waveguide for subwavelength confinement and long-range propagation

Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development. This paper reviews the state-of-the-art and future prospects for these lasers, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.

Terahertz quantum-cascade lasers

We report the demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mode at approximately 3.0 THz. The active region was based on a resonant-phonon depopulation scheme and a metal-metal waveguide was used for modal confinement. Copper to copper thermocompression wafer bonding was used to fabricate the waveguide, which displayed improved thermal properties compared to a previous indium-gold bonding method.

/pdf/operation-of-terahertz-quantum-cascade-lasers-at-164-k-in-9tbdoj9j47.pdf

Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode.

We report the development of a quantum cascade laser, at λ=87.2 μm, corresponding to 3.44 THz or 14.2 meV photon energy. The GaAs/Al0.15Ga0.85As laser structure utilizes longitudinal-optical (LO) phonon scattering for electron depopulation. Laser action is obtained in pulsed mode at temperatures up to 65 K, and at 50% duty cycle up to 29 K. Operating at 5 K in pulsed mode, the threshold current density is 840 A/cm2, and the peak power is approximately 2.5 mW. Based on the relatively high operating temperatures and duty cycles, we propose that direct LO-phonon-based depopulation is a robust method for achieving quantum cascade lasers at long-wavelength THz frequencies.

http://www.seas.ucla.edu/~bwilliam/williams_laser.pdf

3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation

We review the most recent technological and application advances of quantum cascade lasers, underlining the present milestones and future directions from the Mid-infrared to the Terahertz spectral range. Challenges and developments, which are the subject of the contributions to this focus issue, are also introduced.

Quantum cascade lasers: 20 years of challenges.

We report lasing at ∼3.0 THz (λ≈98–102 μm) in a quantum-cascade structure in which mode confinement is provided by a double-sided metal waveguide. The depopulation mechanism is based on resonant phonon scattering, as in our previous work. Lasing takes place in pulsed mode up to a heat-sink temperature of 77 K. The waveguide consists of metallic films placed above and below the 10-μm-thick multiple-quantum-well gain region, which gives low losses and a modal confinement factor of nearly unity. Fabrication takes place via low-temperature metallic wafer bonding and subsequent substrate removal using selective etching. This type of waveguide is expected to be increasingly advantageous at even longer wavelengths.

Benjamin S. Williams

Papers

Terahertz quantum-cascade lasers

Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode.

3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation

Quantum cascade lasers: 20 years of challenges.

Terahertz quantum-cascade laser at λ≈100 μm using metal waveguide for mode confinement