J
John L. Reno
Researcher at Sandia National Laboratories
Publications - 567
Citations - 15031
John L. Reno is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Terahertz radiation & Laser. The author has an hindex of 61, co-authored 545 publications receiving 13561 citations. Previous affiliations of John L. Reno include Massachusetts Institute of Technology & University of New Mexico.
Papers
More filters
Journal ArticleDOI
Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode.
TL;DR: The demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mode at approximately 3.0 THz is reported.
Journal ArticleDOI
3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation
TL;DR: In this article, a quantum cascade laser at λ=87.2 µm was developed for electron depopulation at 3.44 THz and 14.2 meV photon energy.
Journal ArticleDOI
Terahertz laser frequency combs
David Burghoff,Tsung-Yu Kao,Ningren Han,Chun Wang Ivan Chan,Xiaowei Cai,Yang Yang,D. J. Hayton,Jian-Rong Gao,Jian-Rong Gao,John L. Reno,Qing Hu +10 more
TL;DR: In this article, frequency combs based on terahertz quantum cascade lasers are demonstrated, which combine the high power of lasers with the broadband capabilities of pulsed sources. But their performance was limited to 3.5 THz.
Journal ArticleDOI
Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces.
Sheng Liu,Michael B. Sinclair,Sina Saravi,Gordon A. Keeler,Yuanmu Yang,John L. Reno,Gregory M. Peake,Frank Setzpfandt,Isabelle Staude,Thomas Pertsch,Igal Brener +10 more
TL;DR: The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process, and this work presents, for the first time, resonantly enhanced second-harmonic generation using gallium arsenide (GaAs) based dielectric metasurfaces.
Journal ArticleDOI
In-Plane Magnetic Field Effect on the Transport Properties in a Quasi-3D Quantum Well Structure
James S. Brooks,R. M. Clark,N. E. Lumpkin,Jeremy L. O'Brien,John L. Reno,Jerry A. Simmons,Zhenxing Wang,B. Zhang +7 more
TL;DR: In this article, the transport properties of a 200 layer quantum well structure were investigated at integer filling in the quantum Hall state, and it was shown that the transverse magnetoresistance R xx, the Hall resistance R xy, and the vertical resistance R zz all follow a similar behavior with both temperature and in-plane magnetic field.