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Bernd Tillack
Researcher at Innovations for High Performance Microelectronics
Publications - 232
Citations - 3920
Bernd Tillack is an academic researcher from Innovations for High Performance Microelectronics. The author has contributed to research in topics: BiCMOS & Heterojunction bipolar transistor. The author has an hindex of 29, co-authored 220 publications receiving 3632 citations. Previous affiliations of Bernd Tillack include Leibniz Institute for Neurobiology & Korea University.
Papers
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Proceedings ArticleDOI
Phosphorus Segregation Control for SiGe:C Epitaxy
TL;DR: In this article, a two-step steepness profile was observed in 30% SiGe:C layer, and the possible reason of this behavior may be related to relaxation of the SiGe-C layer.
Journal ArticleDOI
Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication
Ketan Anand,Markus Schubert,Agnieszka Anna Corley-Wiciak,David Spirito,Cedric Corley-Wiciak,Wolfgang M. Klesse,Andrea Mari,Bernd Tillack,Yuji Yamamoto +8 more
TL;DR: In this article , a dislocation-free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition.
Proceedings ArticleDOI
Atomically controlled processing in strained Si-based CVD epitaxial growth
TL;DR: In this paper, the concept of atomically controlled processing for group IV semiconductors is shown based on atomic-order surface reaction control in Si-based CVD epitaxial growth.
Journal ArticleDOI
High Quality Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition
TL;DR: In this article , a method for high quality epitaxial growth of Ge on Si (111) and Si (110) is investigated by reduced pressure chemical vapor deposition, where two step Ge epitaxy (low temperature Ge seed and high temperature main Ge growth) with several cycles of annealing by interrupting the Ge growth (cyclic annealed) is performed.
Proceedings ArticleDOI
Atomically controlled processing for Ge CVD epitaxial growth
Junichi Murota,Yuji Yamamoto,Ioan Costina,Bernd Tillack,Vinh Le Thanh,Roger Loo,Matty Caymax +6 more
TL;DR: The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control as mentioned in this paper, where the existences of Ge oxide in the CVD reactor resulting from former Ge deposition and hydrogen termination of the wafer surface is impacting the epitaxial growth essentially.