Bernd Tillack

TL;DR: In this paper, a 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented, which features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage high-frequency HBT (fT =50 GHz, F max =130 GHz, BS CEO =3.7V) integrated in a dual-gate, triple-well RF-CMOS process.

TL;DR: In this article, the design of a radiation-efficient D-band end-fire on-chip antenna utilizing a localized back-side etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic substrate, is presented.

TL;DR: In this article, a high-speed SiGe:C HBT is presented that combines a new extrinsic base construction with a low-resistance collector design to simultaneously minimize base and collector resistances and base collector capacitance.

TL;DR: In this paper, the authors proposed to provide layers in substrate wafers with which the drawbacks of conventional assemblies are overcome in order to achieve an adequate resistance to latch-up in highly scaled, digital CMOS circuits with comparatively low costs and, on the other hand, to ensure low substrate losses/couplings for analog high-frequency circuits and, in addition, to influence the component behavior in a nondestructive manner.

TL;DR: In this paper, the authors demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures.