In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

http://www.acsu.buffalo.edu/~jmjornet/papers/2014/j1.pdf

Full length article: Terahertz band: Next frontier for wireless communications

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.

/pdf/on-chip-light-sources-for-silicon-photonics-ky23qv18q4.pdf

On-chip light sources for silicon photonics

We show that the transient enhanced dif­ fusion of boron in SiGe HBTs can be effec­ tively suppressed by external base doping through BBr3 predeposition. This results in a six times higher Early voltage, a 10% higher peak transit frequency (fT), and a 40% lower iT swing with variation of the col­ lector-emitter voltage, compared to implant­ ed HBTs.

http://ieeexplore.ieee.org/iel5/10058/32252/01503538.pdf

Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

Verfahren
zur Abscheidung von polykristallinem Silizium ausschlieslich auf
einkristallinen ersten Siliziumoberflachenabschnitten einer Substratoberflache, die
neben den ersten Siliziumoberflachenabschnitten
zusatzlich
Isolatoroberflachenabschnitte
aufweist, mit den Schritten des Abscheidens von Bor auf den ersten
Siliziumoberflachenabschnitten
in einer Menge, die bezogen auf die ersten Siliziumoberflachenabschnitte
jeweils mehr als einer Monolage Bor entspricht, und des Abscheidens von
Silizium auf den so behandelten ersten Siliziumoberflachenabschnitten.

Bernd Tillack

Papers

Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

Selektives wachstum von polykristallinem siliziumhaltigen halbleitermaterial auf siliziumhaltiger halbleiteroberfläche