Bradley D. Weaver

TL;DR: In this article, it was determined that defects created at the AlGaN/GaN interface introduce scattering centers near the two-dimensional electron gas (2DEG), which result in degraded mobility.

TL;DR: In this paper, the radiation tolerance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on high quality, low threading dislocation density (TDD) ammonothermal GaN and hydride vapor phase epitaxy GaN substrates was studied and compared to the radiation response of devices on SiC substrates where the TDD is 104 times higher.

TL;DR: In this article, the authors studied the radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) with 2-MeV protons, up to a fluence of $6 \times 10−14$ H+/cm2 (about 200 times of typical Si MOSFET rating).

TL;DR: In this article, a defect located at the edges of the Ni/Au Schottky gate in the proton-irradiated devices was found to be caused by diffusion of Ni through vacancy exchange.

TL;DR: In this paper, an energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM) was used to investigate the effect of proton-induced damage in AlGaN/GaN HEMTs.