Fritz J. Kub

TL;DR: The dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape is demonstrated to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport.

TL;DR: In this article, the authors demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape.

TL;DR: In this paper, the empirical Hall-Petch relationship mathematically describes grain boundary strengthening and provides guidance for a straightforward way to produce stronger materials by increasing the average crystallite grain size.

TL;DR: In this paper, an MOS transistor fabricated on (001) β-Ga2O3 exfoliated from a commercial (−201) βGaO3 substrate was reported, and the maximum drain current of 11.1 mA/mm was measured, and a non-destructive breakdown was reached around 80 V in the off state.

TL;DR: In this article, the epitaxial growth of monoclinic β-Ga2O3 on a-plane and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) was reported.