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Brahim Mezghani

Researcher at University of Sfax

Publications -  47
Citations -  563

Brahim Mezghani is an academic researcher from University of Sfax. The author has contributed to research in topics: Inductor & Piezoresistive effect. The author has an hindex of 9, co-authored 45 publications receiving 278 citations. Previous affiliations of Brahim Mezghani include Centre national de la recherche scientifique & Eni.

Papers
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Journal ArticleDOI

A comprehensive review of Thermoelectric Generators: Technologies and common applications

TL;DR: In-depth analysis of TEGs is presented, starting by an extensive description of their working principle, types, used materials, figure of merit, improvement techniques including different thermoelectric materials arrangement (conventional, segmented and cascaded), and used technologies and substrates types (silicon, ceramics and polymers).
Journal ArticleDOI

Sensitivity and power modeling of CMOS mems single axis convective accelerometers

TL;DR: 3D effects which give the opportunity to better predict not only sensor sensitivity but also power dissipation are investigated, and detector's length decrease is found to have a significant effect on sensitivity.
Journal ArticleDOI

Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C

TL;DR: In this article, the authors investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view, and conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers.
Proceedings ArticleDOI

Electromagnetic modeling of an integrated micromachined inductive microphone

TL;DR: In this article, the authors presented a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone, based on the variation of mutual inductance between an external fixed inductor and an internal suspended inductor.
Proceedings ArticleDOI

From 2D to 3D FEM simulations of a CMOS MEMS convective accelerometer

TL;DR: In this article, the authors present 3D FEM simulations of a CMOS MEMS convective accelerometer and show that the maximum sensitivity location is at a distance of 125μm from the heater center.