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Brahim Mezghani
Researcher at University of Sfax
Publications - 47
Citations - 563
Brahim Mezghani is an academic researcher from University of Sfax. The author has contributed to research in topics: Inductor & Piezoresistive effect. The author has an hindex of 9, co-authored 45 publications receiving 278 citations. Previous affiliations of Brahim Mezghani include Centre national de la recherche scientifique & Eni.
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Journal ArticleDOI
A comprehensive review of Thermoelectric Generators: Technologies and common applications
Nesrine Jaziri,Nesrine Jaziri,Nesrine Jaziri,Ayda Boughamoura,Jens Muller,Brahim Mezghani,Fares Tounsi,Mohammed Ismail +7 more
TL;DR: In-depth analysis of TEGs is presented, starting by an extensive description of their working principle, types, used materials, figure of merit, improvement techniques including different thermoelectric materials arrangement (conventional, segmented and cascaded), and used technologies and substrates types (silicon, ceramics and polymers).
Journal ArticleDOI
Sensitivity and power modeling of CMOS mems single axis convective accelerometers
TL;DR: 3D effects which give the opportunity to better predict not only sensor sensitivity but also power dissipation are investigated, and detector's length decrease is found to have a significant effect on sensitivity.
Journal ArticleDOI
Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C
Sedki Amor,Sedki Amor,Sedki Amor,Nicolas André,Pierre Gérard,S. Z. Ali,Florin Udrea,Fares Tounsi,Brahim Mezghani,Laurent Francis,Denis Flandre +10 more
TL;DR: In this article, the authors investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view, and conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers.
Proceedings ArticleDOI
Electromagnetic modeling of an integrated micromachined inductive microphone
TL;DR: In this article, the authors presented a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone, based on the variation of mutual inductance between an external fixed inductor and an internal suspended inductor.
Proceedings ArticleDOI
From 2D to 3D FEM simulations of a CMOS MEMS convective accelerometer
TL;DR: In this article, the authors present 3D FEM simulations of a CMOS MEMS convective accelerometer and show that the maximum sensitivity location is at a distance of 125μm from the heater center.