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Brian Capozzi

Researcher at Columbia University

Publications -  14
Citations -  1152

Brian Capozzi is an academic researcher from Columbia University. The author has contributed to research in topics: Conductance & Charge carrier. The author has an hindex of 11, co-authored 14 publications receiving 968 citations.

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Journal ArticleDOI

Single-molecule diodes with high rectification ratios through environmental control

TL;DR: This method reliably and reproducibly achieve rectification ratios in excess of 200 at voltages as low as 370 mV using a symmetric oligomer of thiophene-1,1-dioxide and provides a general route for tuning nonlinear nanoscale device phenomena.
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Molecular length dictates the nature of charge carriers in single-molecule junctions of oxidized oligothiophenes

TL;DR: It is demonstrated that charge carriers in single-molecule junctions can be tuned within a family of molecules that contain electron-deficient thiophene-1,1-dioxide (TDO) building blocks, resulting in a unique system in which the charge carrier depends on the backbone length, and provides a new means to tune p- and n-type transport in organic materials.
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Length-Dependent Conductance of Oligothiophenes

TL;DR: It is postulate that different conformers in the junction are a contributing factor to the anomalous trend in the observed conductance as a function of molecule length.
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Breakdown of Interference Rules in Azulene, a Nonalternant Hydrocarbon

TL;DR: It is shown here that simple models cannot be used to predict quantum interference characteristics of nonalternant hydrocarbons and that azulene derivatives that are predicted to exhibit destructive interference based on widely accepted atom-counting models show a significant conductance at low biases.
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Tunable charge transport in single-molecule junctions via electrolytic gating.

TL;DR: Electrochemical gating can directly modulate the alignment of the conducting orbital relative to the metal Fermi energy, thereby changing the junction transport properties, and is fitted as a function of gate voltage with a Lorentzian function.