Bruno Romeira

TL;DR: A metal-cavity light-emitting diode coupled to a waveguide on silicon shows on-chip external quantum efficiency in the 10−4–10−2 range at tens of microamp current injection levels, which greatly exceeds the performance of any waveguide-coupled nanoscale light source integrated on silicon in this current range.

TL;DR: This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

TL;DR: High-speed excitable response capabilities in optoelectronic integrated circuits operating at telecommunication wavelengths comprising a nanoscale double barrier quantum well resonant tunneling diode driving a laser diode mimicking the spiking behavior of biological neurons are demonstrated.

TL;DR: In this article, the role of the Purcell effect in the stimulated and spontaneous emission rates of semiconductor lasers is investigated, taking into account the carriers' spatial distribution in the volume of the active region over a wide range of cavity dimensions and emitter/cavity linewidths, enabling the detailed modeling of the static and dynamic characteristics of either micro- or nano-scale lasers using singlemode rate-equations analysis.

TL;DR: The extremely long lifetimes reported here, to the authors' knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s, and it is conclusively shown that the SiOx capping layer plays an active role in the passivation.