An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication

A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

Power semiconductor device

A semiconductor chip having contacts on the periphery of its top surface is provided with an interposer overlying the central portion of the top surface. Peripheral contact leads extend inwardly from the peripheral contacts to central terminals on the interposer. The terminals on the interposer may be connected to a substrate using techniques commonly employed in surface mounting of electrical devices, such as solder bonding. The leads, and preferably the interposer, are flexible so that the terminals are movable with respect to the contacts on the chip, to compensate for differential thermal expansion of the chip and substrate. The terminals on the interposer may be disposed in an area array having terminals disposed at substantially equal spacings throughout the area of the interposer, thus providing substantial distances between the terminals while accommodating all of the terminals in an area approximately the same size as the area of the chip itself. The interposer may be provided with a compliant layer disposed between the terminals and the chip to permit slight vertical movement of the terminals towards the chip during testing operations. The chip and interposer assembly may be electrically tested prior to assembly to the substrate. A compliant layer disposed between the terminals and the chip permits slight vertical movement of the terminals towards the chip during testing operations, in which the terminals on the interposer are engaged with an assembly of test probes. The entire assembly is compact.

Semiconductor chip assemblies with fan-in leads

A semiconductor chip assembly is mounted to contact pads in a compact area array. An interposer is disposed between the chip and the substrate. The contacts on the chip are connected to terminals on the interposer by flexible leads extending through apertures in the interposer. The terminals on the interposer in turn are bonded to the contact pads on the substrate. Flexibility of the leads permits relative movement of the contacts on the chip relative to the terminals and the contact pads of the substrate and hence relieves the stresses caused by differential thermal expansion. The arrangement provides a compact structure similar to that achieved through flip-chip bonding, but with markedly increased resistance to thermal cycling damage.

Semiconductor chip assemblies having interposer and flexible lead

A high speed, high performance integrated circuit packaging structure that may be used for emulating wafer scale integration structures. The preferred embodiment comprises an interposer having a base substrate having alternating insulation and conductive layers thereon, wherein a plurality of the conductive layers are wiring means which are adapted for maintaining an extremely low noise level in the package. The low noise level and low resistance and capacitance of the wiring means allows a plurality of discrete semiconductor segments to be mounted on and interconnected by the integrated circuit package with a significantly reduced number of drivers and receivers than required by Rent's Rule. Each integrated circuit structure of the present invention emulates a large chip or wafer scale integration structure in performance without having to yield the large chip or wafer, and without redundancy schemes. A plurality of these integrated circuit packaging structures are combined by decals to form a central processing unit of a computer or a portion thereof. In an alternate preferred embodiment, the base substrate of the interposer is made of silicon and any required drivers are formed therein, thus substantially eliminating the need for any drivers on each of the discrete semiconductor segments.

High performance integrated circuit packaging structure

Method of partitioning, testing and diagnosing a vlsi multichip package and associated structure

The key structural and thermo-physical properties of reticulated metal foams (RMF) are reviewed. Analytical expressions relating such properties to basic structural parameters are developed through mathematical modeling and experimental studies. Conductive and convective aspects of thermal energy transfer through RMF-based heat exchangers are reviewed. A mathematical model is developed that calculates maximum thermal performance for such heat exchangers. Results of experimental and finite element analysis predicting thermal performance of test module using a thermal base plate, power device, RMF heat exchanger, and off-the-shelf external cold plate were compared. The superior performance of RMF-based heat exchangers is shown.

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Thermal Applications of Open-Cell Metal Foams

An integrated circuit chip packaging structure, preferably having a semiconductor base substrate (1), i.e., silicon or gallium arsenide, alternating insulation and conductive layers on the base structure, at least two conductive layers (8) being patterned into thin film wiring (i.e., thin film copper of approximately 5 microns), semiconductor integrated circuit chips connected to the upper-most patterned conductive layer, and means to connect the packaging structure to the next level of packaging (i.e., board or card). The thin film wiring layers typically each have coplanar ground, power (39, 40) and signal lines (19, 20), with at least one power (16) or ground line existing between coplanar signal lines to minimize cross talk. To facilitate efficient power distribution, lines of specific power levels of the patterned planes are connected to lines of the same power level on other patterned planes to form three dimensional power planes. To reduce package capacitance and keep the RC constant low, a personalized reference plane is incorporated. The personalized plane has insulating regions extending at least partially through the plane at predetermined locations that coincide with long signal lines on the wiring layers. The combined package provides a packaging alternative that has excellent electrical performance (i.e., speed, low RC constant, efficient power distribution), high density and thermal expansion matching between the underlying semiconductor structure and semiconductor chips mounted on the package. A high yield process for manufacturing the package is also disclosed.

Module for packaging semiconductor integrated circuit chips on a base substrate

A method of power electronic packaging includes a practicable and reliable method of fabricating power circuit modules and associated connections that are compatible with the standard top layer metalization of commercially available power devices. A planar single- or multi-layer membrane structure is attached to a carrier frame, and a via pattern is formed in the membrane. Power devices are aligned and attached to the planar membrane structure; a top layer interconnect structure is formed by metalizing the vias and the film; and a circuit is formed by patterning a deposited metal layer. The carrier frame is removed, and upper and lower thermal base plate sub-assemblies are attached to the power device-on-membrane structure. The planar device-on-membrane structure accommodates different types of power devices having variations in thickness. The thermal base plate sub-assemblies may include integral, high-performance heat exchangers for providing a low thermal resistance path to the ambient.

Burhan Ozmat

Papers

High performance integrated circuit packaging structure

Method of partitioning, testing and diagnosing a vlsi multichip package and associated structure

Thermal Applications of Open-Cell Metal Foams

Module for packaging semiconductor integrated circuit chips on a base substrate

Power electronic module packaging