C
C.-E. Chen
Researcher at Texas Instruments
Publications - 11
Citations - 189
C.-E. Chen is an academic researcher from Texas Instruments. The author has contributed to research in topics: CMOS & Silicon on insulator. The author has an hindex of 6, co-authored 11 publications receiving 189 citations.
Papers
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Journal ArticleDOI
Transient Radiation Effects in SOI Memories
TL;DR: In this paper, the first measurements of transient radiation effects on SOI discrete devices and an LSI memory were presented, and a commercially processed LSI SOI memory, a 4K × 1 SRAM on SIMOX, was tested for SEU and transient ionizing radiation effects as a function of bias conditions and dose rate.
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Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator
B.-Y. Mao,C.-E. Chen,Mishel Matloubian,L. R. Hite,Gordon P. Pollack,Harold L. Hughes,K. Maley +6 more
TL;DR: In this paper, the total dose characteristics of CMOS devices fabricated in oxygen implanted buried oxide silicon-on-insulator (SOI) substrates with different post-implant annealing processes are studied.
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Stacked CMOS SRAM cell
TL;DR: In this article, a static random access memory (SRAM) cell with cross-coupled stacked CMOS inverters is demonstrated for the first time, where the memory cell has been exercised through the write and read cycles with external signal generators while the output is buffered by an on-chip, stacked-CMOS-inverter-based amplifier.
Journal ArticleDOI
Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon
Satwinder Malhi,Rajiv R. Shah,Hisashi Shichijo,R.F. Pinizzotto,C.-E. Chen,Pallab K. Chatterjee,H.W. Lam +6 more
TL;DR: In this paper, a grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance and dramatic enhancement of drive current and curtailment of leakage current have been observed.
Journal ArticleDOI
p-Channel MOSFET's in LPCVD PolySilicon
Satwinder Malhi,Pallab K. Chatterjee,R.F. Pinizzotto,H.W. Lam,C.-E. Chen,Hisashi Shichijo,Rajiv R. Shah,D.W. Bellavance +7 more
TL;DR: In this paper, a 5000-A n+poly acts as the gate electrode on which a 500-A thermal oxide is grown to act as gate insulator, and a 1500-A LPCVD polysilicon layer is deposited at 620°C and is subsequently boron doped to form the conductive channel.