C
C. Hu
Researcher at University of California, Berkeley
Publications - 50
Citations - 3234
C. Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Field-effect transistor & MOSFET. The author has an hindex of 27, co-authored 48 publications receiving 3102 citations.
Papers
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Journal ArticleDOI
Threshold voltage model for deep-submicrometer MOSFETs
TL;DR: In this article, the threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep submicrometer range has been investigated.
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A true single-transistor oxide-nitride-oxide EEPROM device
T.Y. Chan,K.K. Young,C. Hu +2 more
TL;DR: In this article, a single-transistor EEPROM device using single-polysilicon technology is described, which is programmed by channel hot-electron injection and the charges are stored in the oxide-nitride-oxide (ONO) gate dielectric.
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Subbreakdown drain leakage current in MOSFET
TL;DR: In this article, a band-to-band tunneling in Si in the drain/gate overlap region was proposed to limit the leakage current to 0.1 pA/µm.
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Alpha-particle-induced field and enhanced collection of carriers
TL;DR: In this paper, a simple physical model explains all the characteristics of the newly discovered funnelling phenomenon, and predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomena.
Journal ArticleDOI
A capacitorless double-gate DRAM cell
C. Hu,Tsu-Jae King,Chenming Hu +2 more
TL;DR: In this article, a capacitorless double-gate DRAM (DG-DRAM) cell is proposed to reduce off-state leakage and disturb problems by using a thin, lightly doped body.