Min-Chie Jeng

TL;DR: In this article, the threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep submicrometer range has been investigated.

TL;DR: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation, which allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling.

TL;DR: In this article, the authors discuss the effect of temperature on MOSFET analogue applications and show that low temperature has greater benefit on current driving capability for analogue devices which have longer L and lower Vg values than digital ones.

TL;DR: In this paper, the authors describe recent activities and trends in MOSFET modeling and compare BSIM3 and MOS9, the two most discussed candidates for the standard deep-submicron MOS-FET model.

TL;DR: Based on experimental data and physical understanding of the narrow width effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of Rds are derived and discussed in this article.