C.M. Waits

TL;DR: In this paper, the authors investigated the use of deep reactive ion etching (DRIE) and the tailoring of etch selectivity for precise fabrication and found that the non-uniformity and surface roughness characteristics are scaled by the etch selectsivity when the 3D profile is transferred into the silicon.

TL;DR: In this article, the authors investigated two important design limitations for gray-scale lithography: the minimum usable pixel size and maximum usable pitch size, together with the resolution of the projection lithography system and the spot size used to write the optical mask, and determined the maximum range of usable gray levels for developing 3D large area silicon structures.

TL;DR: In this paper, the first fabrication and development of a deep phase Fresnel lens (PFL) in silicon through the use of gray-scale lithography and deep-reactive ion etching (DRIE) is reported.

TL;DR: In this article, a double-exposure grayscale photolithography technique is developed and demonstrated to produce three-dimensional (3-D) structures with a high vertical resolution without altering the mask fabrication process.

TL;DR: In this article, the advantages and applications of chalcogenide glass ChG thin film photoresists for grayscale lithography are demonstrated, and a substrate to ChG/silver thick-ness etching ratio of 10 is obtained for the transfer of patterns into silicon using reactive ion etching RIE, more than a fivefold increase compared to traditional polymer photoresist.