Cezhou Zhao

TL;DR: The paper reviews the advanced research status concerning charge trapping memory with high- k dielectrics for the performance improvement and application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

TL;DR: The bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short- term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity(STDP) reveal the great potential of R RAM devices in the field of neuromorphic application.

TL;DR: In this paper, the MZ interferometers were fabricated by using KOH anisotropic etching and their insertion losses and modulation depths were measured to be 4.81 dB and 98% respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the interferometer was 816.0 μm.

TL;DR: In this article, the authors reviewed some novel techniques mainly within two years to solve this problem from aspects of promotion of fabrication technology, structural modification, and choice of back contact materials.

TL;DR: In this article, the effects of high-temperature postdeposition annealing on NdAlOx thin films were reported, and the as-deposited thin films are amorphous in nature.