Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
Zongjie Shen,Zongjie Shen,Chun Zhao,Chun Zhao,Yanfei Qi,Yanfei Qi,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Li Yang,Cezhou Zhao,Cezhou Zhao +11 more
TLDR
The bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short- term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity(STDP) reveal the great potential of R RAM devices in the field of neuromorphic application.Abstract:
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.read more
Citations
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Dynamical memristors for higher-complexity neuromorphic computing
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Intermediate layer for enhanced triboelectric nanogenerator
Xinkai Xie,Xinkai Xie,Xiaoping Chen,Xiaoping Chen,Chun Zhao,Yina Liu,Xuhui Sun,Cezhou Zhao,Zhen Wen +8 more
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Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device.
Hojeong Ryu,Sungjun Kim +1 more
TL;DR: Self-rectifying resistive switching characteristics are achieved by the asymmetric device stack, which is an advantage of the current suppression in the crossbar array structure and bio-synaptic characteristics are mimicked by replacing the bio-stimulation with the interval time of paired pulse inputs.
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Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility
Muhammad Muqeet Rehman,Hafiz Mohammad Mutee Ur Rehman,Woo Young Kim,Syed Sibtul Hassan Sherazi,Muhammad Wajdan Rao,Maryam Khan,Zubair Muhammad +6 more
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Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory.
H.D. Cho,Sungjun Kim +1 more
TL;DR: The synaptic characteristics of AlN-based conductive bridge random access memory (CBRAM) as a synaptic device for neuromorphic systems are presented and paired-pulse facilitation in the nervous system is mimicked to induce STP.
References
More filters
Journal ArticleDOI
Competitive Hebbian learning through spike-timing-dependent synaptic plasticity
TL;DR: In modeling studies, it is found that this form of synaptic modification can automatically balance synaptic strengths to make postsynaptic firing irregular but more sensitive to presynaptic spike timing.
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno,Tsuyoshi Hasegawa,Tohru Tsuruoka,Kazuya Terabe,James K. Gimzewski,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: The discovery of a Ag(2)S inorganic synapse is reported, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time and indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.
Journal ArticleDOI
Short-term memory to long-term memory transition in a nanoscale memristor.
Ting Chang,Sung Hyun Jo,Wei Lu +2 more
TL;DR: This study shows experimentally that the retention loss in a nanoscale memristor device bears striking resemblance to memory loss in biological systems and confirms that not only the shape or the total number of stimuli is influential, but also the time interval between stimulation pulses plays a crucial role in determining the effectiveness of the transition.
Proceedings ArticleDOI
Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
In-Gyu Baek,Moon-Sook Lee,Sunae Seo,Myoung-Jae Lee,D.H. Seo,Dongseok Suh,Jong-Il Park,S.O. Park,Hyun-Suk Kim,Inkyung Yoo,U.-In. Chung,J.T. Moon +11 more
TL;DR: In this article, a simple binary transition metal oxide (TMO) resistive random access memory (RRAM) was integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties were reported for the first time.
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