Yanfei Qi

TL;DR: The bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short- term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity(STDP) reveal the great potential of R RAM devices in the field of neuromorphic application.

TL;DR: An overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension ofGRM- based R RAM devices.

TL;DR: The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage, the highest ON/OFF ratio, the narrowest resistance distribution, the longest retention time and the most endurance cycles.

TL;DR: A translucent resistance random access memory (RRAM) with Ag/AlOx/indium tin oxide (ITO) stack grown on a glass substrate was investigated through a systematic and comprehensive investigation as discussed by the authors.

TL;DR: In this article, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for aluminum oxide and graphene oxide (GO) dielectric films, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property.