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Cheng Han

Researcher at National University of Singapore

Publications -  26
Citations -  3243

Cheng Han is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Electron mobility. The author has an hindex of 20, co-authored 26 publications receiving 2576 citations. Previous affiliations of Cheng Han include Shenzhen University & National University of Defense Technology.

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Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus

TL;DR: The realization of epitaxial growth of large-scale and high quality atomic-layered blue phosphorus can enable the rapid development of novel electronic and optoelectronic devices based on this emerging two-dimensional material.
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Two-dimensional transition metal dichalcogenides: interface and defect engineering

TL;DR: Two-dimensional transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics and their corresponding applications in electronic and optoelectronic devices.
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Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

TL;DR: An effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate and molybdenum trioxide is reported, indicating a greatly improved electron-transport behaviour.
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Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate

TL;DR: The electron doping enhances the formation of negative trions in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs, which results in large photoluminescence suppression and an obvious photocurrent enhancement in MonS2 FETs.
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Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

TL;DR: It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones and found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10 A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material.