Shiqiao Qin

TL;DR: In this paper, a p-g-n heterostructure formed by sandwiching graphene with a gapless band structure and wide absorption spectrum in an atomically thin p-n junction was proposed for broadband photodetection in the visible to short-wavelength infrared range at room temperature.

TL;DR: In this article, the elastic constants and electronic structures of two-dimensional monolayer MoS 2 under elastic strain using the first-principles calculations were analyzed and the in-plane stiffness and Poisson ratio calculated in the harmonic elastic strain range were found to be 123 N/m and 0.25, indicating that monollayer MoS2 is much softer than graphene.

TL;DR: In this article, the structural, electronic and magnetic properties of monolayer MoS2 doped with nonmetal and transition-metal atoms are investigated using first-principles calculations.

TL;DR: In this paper, high responsivity phototransistors based on few-layer rhenium disulfide (ReS2) are presented, where the maximum attainable photoresponsivity can reach as high as 88 600 A W−1, which is a record value compared to other individual 2D materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2.

TL;DR: The electron doping enhances the formation of negative trions in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs, which results in large photoluminescence suppression and an obvious photocurrent enhancement in MonS2 FETs.