Cheol-Joo Kim

TL;DR: The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.

TL;DR: This work reports a versatile and scalable process that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene, and demonstrates that the resulting films form mechanically continuous sheets across these heterojunctions.

TL;DR: A scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs, MoS2 and WS2, which show linear current-voltage characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures.

TL;DR: In this article, the spinon and holon branches were found to have energy scales of ∼0.43 and 1.3 eV, respectively, in quantitative agreement with the theoretical predictions.

TL;DR: A chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation and polarity, resulting in tunable chiral properties of the final stack, which produces a two-atom-thick chiral film.