C
Chih-Tsung Tsai
Researcher at National Sun Yat-sen University
Publications - 17
Citations - 1086
Chih-Tsung Tsai is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Thin-film transistor & Passivation. The author has an hindex of 12, co-authored 17 publications receiving 1029 citations. Previous affiliations of Chih-Tsung Tsai include National Tsing Hua University.
Papers
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Journal ArticleDOI
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen,Ting-Chang Chang,Chih-Tsung Tsai,Sheng-Yao Huang,Shih-Ching Chen,Chih-Wei Hu,Simon M. Sze,Ming-Jinn Tsai +7 more
TL;DR: In this article, the influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively.
Journal ArticleDOI
Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
Te-Chih Chen,Ting-Chang Chang,Chih-Tsung Tsai,Tien-Yu Hsieh,Shih-Ching Chen,Chia-Sheng Lin,Ming-Chin Hung,Chun-Hao Tu,Jiun-Jye Chang,Po-Lun Chen +9 more
TL;DR: In this paper, the impact of light illumination on the stability of indium-gallium- zinc oxide thin film transistors under positive gate-bias stress was investigated, and it was shown that illumination can excite the trapped charges and accelerate the charge detrapping process.
Journal ArticleDOI
Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
Chih-Tsung Tsai,Ting-Chang Chang,Shih-Ching Chen,Ikai Lo,S.W. Tsao,Ming-Chin Hung,Jiun-Jye Chang,Chen-Yi Wu,Chun-Yao Huang +8 more
TL;DR: In this paper, a post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors.
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Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Te-Chih Chen,Ting-Chang Chang,Tien-Yu Hsieh,Wei-Siang Lu,Fu-Yen Jian,Chih-Tsung Tsai,Sheng-Yao Huang,Chia-Sheng Lin +7 more
TL;DR: In this article, the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress was investigated and it was shown that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period.
Journal ArticleDOI
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
Min-Chen Chen,Ting-Chang Chang,Sheng-Yao Huang,Shih-Ching Chen,Chih-Wei Hu,Chih-Tsung Tsai,Simon M. Sze +6 more
TL;DR: In this paper, a sputtered InGaZnO (IGZO) thin film was applied into a resistive random access memory (RAM) device, which exhibited a repeatable bipolar resistance switching behavior without an electroforming process.