Tien-Yu Hsieh

TL;DR: In this paper, the impact of light illumination on the stability of indium-gallium- zinc oxide thin film transistors under positive gate-bias stress was investigated, and it was shown that illumination can excite the trapped charges and accelerate the charge detrapping process.

TL;DR: In this article, the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress was investigated and it was shown that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period.

TL;DR: In this paper, the authors investigated the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation and found that more interface states were generated during SiOx layer deposition by plasma-enhanced-chemical-vapor-deposition.

TL;DR: In this paper, the effect of repeated bending of flexible p-channel low-temperature polycrystalline-silicon thin-film transistors employing an ultra-lowtemperature process was investigated.

TL;DR: In this article, the effect of gate/drain bias stress in InGaZnO thin-film transistors under light illumination and in a darkened environment was investigated and the degradation behavior was analyzed.