Christopher M. Snowden

TL;DR: In this article, a detailed hot-electron device model suitable for modeling short-gate-length GaAs MESFET's is described and a two-dimensional numerical simulation is used to solve a set of semiclassical carrier transport equations, including a full rigorous solution of the energy conservation equation.

TL;DR: The history of RF and microwave computer-aided engineering is documented in the annals of the IEEE Microwave Theory and Techniques Society and the pursuit of accurate models of active devices and of passive components continues to be a key activity.

TL;DR: In this article, the authors deal mainly with physical device models which are developed from the carrier transport physics and device geometry considerations, focusing mainly on silicon and gallium arsenide devices and including models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFET, transferred electron devices, pn junction diodes and Schottky varactor dodes.

TL;DR: In this paper, a spectral domain decomposition approach is presented for the time-dependent thermal modeling of complex nonlinear (3-D) electronic systems, from metallized power FETs and MMICs through MCMs, up to circuit board level.

TL;DR: It is shown that BiP is transported to the vacuole in a wortmannin-sensitive manner in tobacco and that it could play an active role in this second disposal route, and it is demonstrated that a subset of BiP-ligand complexes is destined to the Vacuole and differs from those likely to be disposed of via the ERAD pathway.