Congwei Tan

TL;DR: In this paper, air-stable, non-encapsulated Bi2O2Se ultrathin films grown by chemical vapour deposition display high electron mobility and exceptional semiconducting transport properties.

TL;DR: A novel roll-to-roll, etching-free, clean transfer of CVD-grown graphene from copper to plastic using surface-energy-assisted delamination in hot deionized water is reported.

TL;DR: High-mobility atomically thin Bi2O2Se semiconductor, a typical non-neutral layered crystal without a standard vdWs gap, was synthesized via a facial chemical vapor deposition method, showing excellent controllability for thickness, domain size, nucleation site, and crystal-phase evolution.

TL;DR: In this article, an infrared photodetector based on two-dimensional Bi2O2Se crystal, whose main characteristics are outstanding in the whole twodimensional family: high sensitivity of 65 AW−1 at 1200 nm and ultrafast photoresponse of ~1 ps at room temperature, implying an intrinsic material-limited bandwidth up to 500 GHz.

TL;DR: An infrared photodetector based on 2D-bismuth oxyselenide with high responsivity, ultrafast photoresponse of ~1 ps at room temperature and a detectable frequency limit of up to 500 GHz is reported.