Constantin Papadas

TL;DR: In this paper, the temperature dependence of the Fowler-Nordheim (F-N) tunnel emission in a metaloxide-semiconductor structure is analyzed both theoretically and experimentally.

TL;DR: In this paper, a model for the intrinsic retention characteristics of FLOTOX EEPROM cells is presented, which is based on the temperature dependence of the Fowler-Nordheim emission current.

TL;DR: In this paper, a remanent, electrically programmable and erasable memory device consisting of a MOS type transistor whose gate insulator contains charged mobile species is disclosed, where the gate is comprised transversely of a sandwich comprising at least five areas, two intermediate areas having first band-gap values, and two endmost and a central areas having band gap values greater than the first values.

TL;DR: In this paper, the dielectric reliability in the thin and ultrathin oxide regime is investigated. But the wearout mechanisms and the breakdown phenomena related to the Si Si SiO 2 system are considered within the 12nm-5nm oxide thickness range.

TL;DR: In this article, the authors investigated the variation of the bulk oxide charge build-up characteristics of gate dielectrics after different Fowler-Nordheim stress conditions and proved that none of the degradation mechanism known so far are capable of explaining the evolution of bulk oxide degradation features after high field electrical stress.