Cristian Rivas

TL;DR: In this paper, the electronic structure and transmission coefficients of Si nanowires were calculated in a sp/sup 3/d/sup 5/s/sup model, and the effect of wire thickness on the bandgap, conduction valley splitting, hole band splitting, effective masses, and transmission was demonstrated.

TL;DR: In this article, a simulation of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts was used to calculate the currentvoltage response of the diode.

TL;DR: In this article, the density of states of a nanowire exhibits peaks at energies in which the individual transverse modes begin to propagate, and this initial increase occurs at energies near the conduction and valence band edges of the semiconductor substrate on which the nanowires are grown.

TL;DR: In this article, the current of a molecular beam epitaxially grown Sb and B delta-doped Si tunnel diode is simulated in all regions of tunneling: peak, valley, and post-valley turn-on.

TL;DR: In this article, the authors present an overview of semiconductor device modeling using non-equilibrium Green function techniques and their associated goals, problems, and solutions tend to naturally divide according to the dimensionality, 1D, 2D, or 3D of the transport which they use to classify and organize the discussion.