S
Sean L. Rommel
Researcher at Rochester Institute of Technology
Publications - 65
Citations - 1163
Sean L. Rommel is an academic researcher from Rochester Institute of Technology. The author has contributed to research in topics: Diode & Tunnel diode. The author has an hindex of 19, co-authored 65 publications receiving 1134 citations. Previous affiliations of Sean L. Rommel include University of Delaware & University of Illinois at Urbana–Champaign.
Papers
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Journal ArticleDOI
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
Sean L. Rommel,Thomas E. Dillon,M. W. Dashiell,H. Feng,James Kolodzey,Paul R. Berger,Phillip E. Thompson,Karl D. Hobart,Roger K. Lake,Alan Seabaugh,Gerhard Klimeck,D. Blanks +11 more
TL;DR: In this article, a Si/Si 0.5Ge0.5/Si heterostructure was used to grow tunneling diodes using low temperature molecular beam epitaxy, which utilized both a central intrinsic spacer and injected injectors.
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Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
Jae-Hyung Jang,Weifeng Zhao,J. W. Bae,D. Selvanathan,Sean L. Rommel,Ilesanmi Adesida,A.N. Lepore,M.H. Kwakernaak,Joseph H. Abeles +8 more
TL;DR: An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in Cl2-based plasma as mentioned in this paper.
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Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
Cristian Rivas,Roger K. Lake,Gerhard Klimeck,William R. Frensley,Massimo V. Fischetti,Phillip E. Thompson,Sean L. Rommel,Paul R. Berger +7 more
TL;DR: In this article, a simulation of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts was used to calculate the currentvoltage response of the diode.
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Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
Niu Jin,Sung-Yong Chung,R.M. Heyns,Paul R. Berger,Ronghua Yu,Phillip E. Thompson,Sean L. Rommel +6 more
TL;DR: In this article, a vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them.
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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
M. W. Dashiell,R. T. Troeger,Sean L. Rommel,Thomas N. Adam,Paul R. Berger,C. Guedj,James Kolodzey,Alan Seabaugh,Roger K. Lake +8 more
TL;DR: In this paper, the authors present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (T/sub growth/=275/spl deg/C) using in situ boron and phosphorus doping.