D
D. Le Si Dang
Researcher at Centre national de la recherche scientifique
Publications - 8
Citations - 962
D. Le Si Dang is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Cathodoluminescence & Nanorod. The author has an hindex of 7, co-authored 8 publications receiving 905 citations. Previous affiliations of D. Le Si Dang include Joseph Fourier University & University of Grenoble.
Papers
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Journal ArticleDOI
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.
Magnus Willander,Omer Nur,Qing Xiang Zhao,Lili Yang,Michael Lorenz,Bingqiang Cao,J. Zuniga Perez,C. Czekalla,G. Zimmermann,Marius Grundmann,Andrey Bakin,Arne Behrends,M. Al-Suleiman,Abdelhamid El-Shaer,A. Che Mofor,B. Postels,Andreas Waag,Nikos Boukos,A. Travlos,Ho-Sang Kwack,J Guinard,D. Le Si Dang +21 more
TL;DR: Light emitting diodes based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed.
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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
TL;DR: A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed, and detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth.
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Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantum wells.
C. Czekalla,J Guinard,C. Hanisch,Bingqiang Cao,E. M. Kaidashev,Nikos Boukos,A. Travlos,Julien Renard,Bruno Gayral,D. Le Si Dang,Michael Lorenz,Marius Grundmann +11 more
TL;DR: Laterally strained areas of about 5 nm diameter were identified at the quantum well positions on top of the nanowires by high-resolution transmission electron microscopy, thus pointing to quantum-dot-like emission centers.
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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate
Xiaojun Chen,J.S. Hwang,Guillaume Perillat-Merceroz,S. Landis,B. Martin,D. Le Si Dang,Joël Eymery,Christophe Durand +7 more
TL;DR: In this paper, a new process has been developed to improve the homogeneity of the nucleation selectivity of c-oriented hexagonal prismatic nanostructures at high temperature (1040 °C), which consists of an initial GaN nucleation step at 950 °C followed by ammonia annealing before high temperature growth.
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Electro‐optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p‐GaN white light emitting diodes
TL;DR: In this paper, the vertical aligned ZnO nanorods with diameter in the range of 160-200 nm were grown on p-GaN/sapphire substrates by aqueous chemical growth technique and white light emitting I diodes (LEDs).