C
Christophe Durand
Researcher at University of Grenoble
Publications - 70
Citations - 2450
Christophe Durand is an academic researcher from University of Grenoble. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Quantum well. The author has an hindex of 25, co-authored 66 publications receiving 2235 citations. Previous affiliations of Christophe Durand include Centre national de la recherche scientifique & Commissariat à l'énergie atomique et aux énergies alternatives.
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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
TL;DR: A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed, and detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth.
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M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
Robert Koester,Jun-Seok Hwang,Damien Salomon,Xiaojun Chen,Catherine Bougerol,Jean-Paul Barnes,Daniel Le Si Dang,Lorenzo Rigutti,Andres De Luna Bugallo,Gwénolé Jacopin,Maria Tchernycheva,Christophe Durand,Joël Eymery +12 more
TL;DR: These radial nonpolar quantum wells used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission demonstrating the absence of the quantum Stark effect as expected due to the non polar orientation.
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Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
Xing Dai,Agnes Messanvi,Agnes Messanvi,H. Zhang,Christophe Durand,Joël Eymery,Catherine Bougerol,Catherine Bougerol,François H. Julien,Maria Tchernycheva +9 more
TL;DR: Large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD show no electroluminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation.
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Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
Maria Tchernycheva,A. Messanvi,A. Messanvi,A. De Luna Bugallo,Gwénolé Jacopin,P. Lavenus,Lorenzo Rigutti,Lorenzo Rigutti,H. Zhang,Y. Halioua,François H. Julien,Joël Eymery,Christophe Durand +12 more
TL;DR: MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication to achieve a good spectral matching between the emission wavelength and the detection range.
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Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
TL;DR: The shape of c-oriented GaN nanostructures is directly related to the crystal polarity as discussed by the authors, and the shape of GaN wires can be directly selected using N-polar GaN freestanding substrates and exhibit good optical properties.