D. Scott Katzer

TL;DR: The demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductor opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

TL;DR: In this article, the authors demonstrate growth of ScxAl1-xN on GaN and SiC substrates using plasma-assisted molecular beam epitaxy with x'='0.14'-0.24'.

TL;DR: The novel ENZ-SPhP coupled polaritons with a highly propagative character and deeply subwavelength light confinement can be utilized as building blocks for future infrared and terahertz nanophotonic integration and communication devices.

TL;DR: In this article, an epitaxial high-overtone bulk acoustic wave resonator (HBAR) was proposed to achieve a power injection efficiency of >99% from transducer to phonon cavity.

TL;DR: In this article, a 1-nm SiNx gate dielectric was deposited ex situ in a molecular beam epitaxy system and used to increase the carrier density of the 2-D electron gas under an ultrathin InAlN/AlN (2.3 nm/1 nm) barrier.