D
D. T. Clark
Researcher at Raytheon
Publications - 27
Citations - 414
D. T. Clark is an academic researcher from Raytheon. The author has contributed to research in topics: CMOS & Silicon carbide. The author has an hindex of 9, co-authored 27 publications receiving 365 citations.
Papers
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Journal ArticleDOI
High Temperature Silicon Carbide CMOS Integrated Circuits
D. T. Clark,E.P. Ramsay,A.E. Murphy,Dave A. Smith,Robin. F. Thompson,R.A.R. Young,Jennifer D. Cormack,C. Zhu,Stephen J. Finney,John E. Fletcher +9 more
TL;DR: In this paper, the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.
Journal ArticleDOI
Monolithic integration of InP-based transistors on Si substrates using MBE
W. K. Liu,Dmitri Lubyshev,Joel M. Fastenau,Y. Wu,Mayank T. Bulsara,Eugene A. Fitzgerald,Miguel Urteaga,W. Ha,J. Bergman,Bobby Brar,William E. Hoke,J.R. LaRoche,K.J. Herrick,T.E. Kazior,D. T. Clark,Dave A. Smith,Robin. F. Thompson,Charlotte Drazek,Nicolas Daval +18 more
TL;DR: In this paper, a direct epitaxial growth approach for the heterogeneous integration of high-speed III-V devices with Si CMOS logic on a common Si substrate was reported.
Proceedings ArticleDOI
High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate
Thomas E. Kazior,Jeffrey R. LaRoche,Miguel Urteaga,J. Bergman,Myung-Jun Choe,K. J. Lee,T. Seong,M. Seo,A. Yen,Dmitri Lubyshev,Joel M. Fastenau,W. K. Liu,Dave A. Smith,D. T. Clark,Robin. F. Thompson,Mayank T. Bulsara,Eugene A. Fitzgerald,Charlotte Drazek,Eric Guiot +18 more
TL;DR: In this article, the authors present results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate).
Journal ArticleDOI
High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
R.A.R. Young,D. T. Clark,Jennifer D. Cormack,A.E. Murphy,Dave A. Smith,Robin. F. Thompson,E.P. Ramsay,Stephen J. Finney +7 more
TL;DR: In this article, a developing CMOS manufacturing process using a 4H SiC substrate has been used to fabricate a range of simple logic and analogue circuits and is intended for power control and mixed signal sensor interface applications.
Proceedings ArticleDOI
A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
T.E. Kazior,J.R. LaRoche,Dmitri Lubyshev,Joel M. Fastenau,W. K. Liu,Miguel Urteaga,W. Ha,J. Bergman,M. J. Choe,Mayank T. Bulsara,Eugene A. Fitzgerald,Dave A. Smith,D. T. Clark,Robin. F. Thompson,Charlotte Drazek,Nicolas Daval,L. Benaissa,Emmanuel Augendre +17 more
TL;DR: In this paper, a BCB-based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit, which serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.