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Emmanuel Augendre
Researcher at Katholieke Universiteit Leuven
Publications - 60
Citations - 746
Emmanuel Augendre is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: CMOS & Gate oxide. The author has an hindex of 14, co-authored 59 publications receiving 733 citations. Previous affiliations of Emmanuel Augendre include Alternatives & Commissariat à l'énergie atomique et aux énergies alternatives.
Papers
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Journal ArticleDOI
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS
TL;DR: In this article, the linear kink effects (LKEs) were shown to occur in SOI and bulk MOSFETs in the linear operation regime and called here the LKEs.
Proceedings ArticleDOI
A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM
K. von Arnim,Emmanuel Augendre,A.C. Pacha,T. Schulz,K.T. San,Florian Bauer,Axel Nackaerts,Rita Rooyackers,T. Vandeweyer,Bart Degroote,Nadine Collaert,Abhisek Dixit,R. Singanamalla,Weize Xiong,Andrew Marshall,C.R. Cleavelin,K. Schrufer,Malgorzata Jurczak +17 more
TL;DR: SRAM cells and product-typical critical paths with more than 10k transistors demonstrate the capability for large-scale integration and NAND and NOR show significant improvement in delay vs. stack height compared to bulk CMOS.
Patent
Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit
TL;DR: In this article, an integrated circuit including at least: a first MOS transistor, a second MOS transistors, and a dielectric layer arranged at least between the portion of the electrically conductive material and the channel region of the second transistor is described.
Proceedings ArticleDOI
Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications
K.G. Anil,Anabela Veloso,Stefan Kubicek,Tom Schram,Emmanuel Augendre,J.-F. de Marneffe,Katia Devriendt,Anne Lauwers,Stephan Brus,Kirklen Henson,Serge Biesemans +10 more
TL;DR: In this article, the Ni-silicided metal gate (FUSI) CMOS devices with HfO2-based gate dielectrics for the first time were fabricated.
Proceedings ArticleDOI
A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
T.E. Kazior,J.R. LaRoche,Dmitri Lubyshev,Joel M. Fastenau,W. K. Liu,Miguel Urteaga,W. Ha,J. Bergman,M. J. Choe,Mayank T. Bulsara,Eugene A. Fitzgerald,Dave A. Smith,D. T. Clark,Robin. F. Thompson,Charlotte Drazek,Nicolas Daval,L. Benaissa,Emmanuel Augendre +17 more
TL;DR: In this paper, a BCB-based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit, which serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.