Journal ArticleDOI
High Temperature Silicon Carbide CMOS Integrated Circuits
D. T. Clark,E.P. Ramsay,A.E. Murphy,Dave A. Smith,Robin. F. Thompson,R.A.R. Young,Jennifer D. Cormack,C. Zhu,Stephen J. Finney,John E. Fletcher +9 more
TLDR
In this paper, the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.Abstract:
The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.read more
Citations
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Journal ArticleDOI
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
Journal ArticleDOI
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
TL;DR: In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated.
Journal ArticleDOI
High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
R.A.R. Young,D. T. Clark,Jennifer D. Cormack,A.E. Murphy,Dave A. Smith,Robin. F. Thompson,E.P. Ramsay,Stephen J. Finney +7 more
TL;DR: In this article, a developing CMOS manufacturing process using a 4H SiC substrate has been used to fabricate a range of simple logic and analogue circuits and is intended for power control and mixed signal sensor interface applications.
Journal ArticleDOI
Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
Nathan Kuhns,Landon Caley,Ashfaqur Rahman,Shamim Ahmed,Jia Di,H. Alan Mantooth,A. Matthew Francis,Jim Holmes +7 more
TL;DR: In this paper, the authors present a complex digital integrated circuit design methodology using both synchronous and asynchronous logic for comparison in a young silicon carbide (SiC) design process developed by Raytheon UK.
Journal ArticleDOI
A SiC CMOS Linear Voltage Regulator for High-Temperature Applications
Robert Murphree,Sajib Roy,Shamim Ahmed,M. Barlow,Ashfaqur Rahman,Anthony Matthew Francis,Jim Holmes,Homer Alan Mantooth,Jia Di +8 more
TL;DR: The first SiC integrated circuit linear voltage regulator is reported in this article, which uses a 20-V supply and generates an output of 15 V, adjustable down to 10 V. The voltage regulator demonstrated load regulations of 1.49% and 9% for a 2-A load at temperatures of 25 and 300 °C, respectively.
References
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MonographDOI
Process technology for silicon carbide devices
TL;DR: Zetterling, S.M.Ostling and S.J.Pearton as mentioned in this paper, S.Sveinbjornsson, S.-K.Lee, and M.
Journal ArticleDOI
Digital CMOS IC's in 6H-SiC operating on a 5-V power supply
TL;DR: In this article, an implanted p-well process was used to construct the first 6H-SiC CMOS circuit with a 5V power supply for temperatures ranging from room temperature up to 300/spl deg/C.
Journal ArticleDOI
Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
TL;DR: In this paper, the first p-well complementary metal oxide semiconductor (CMOS) digital integrated circuits in 6H-SiC were reported, with stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.
Journal ArticleDOI
NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
Martin Le-Huu,Frederik F. Schrey,Michael Grieb,H. Schmitt,Volker Haeublein,Anton J. Bauer,Heiner Ryssel,Lorenz Frey +7 more
TL;DR: In this paper, the authors used 4H-SiC MOSFETs to build NMOS logic gates intended for high temperature operation and characterized the logic gates between 25°C and 500°C.
Journal ArticleDOI
Development of A 4H-SiC CMOS Inverter
TL;DR: In this paper, the authors report the first 4H-SiC CMOS inverter, which was designed to be integrated in the process flow of a 4HSiC power DMOSFET.