D. Vignaud

TL;DR: In this article, a new transition scheme was proposed based on the results of injection-dependent energy, lifetime and polarization of radiative recombinations (type II) in InAlAs-InP heterostructures grown by gas source molecular beam epitaxy.

TL;DR: A high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition shows the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated.

TL;DR: In this article, the direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis.

TL;DR: In this article, a fabrication process of graphene field effect transistors (GFETs) using natural oxidation of aluminum as dielectrics was presented, which provided an alternative fabrication choice for future flexible electronics with the large scale and arbitrary substrates.

TL;DR: The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution.