Sylvie Godey

TL;DR: Growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon and a precise positioning process using a hole array in a dielectric layer thermally grown on silicon are demonstrated.

TL;DR: First principles density functional calculations demonstrate a better delocalization of the frontier orbitals as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one.

TL;DR: In this paper, a new azobenzene−thiophene molecular switch is designed, synthesized, and used to form self-assembled monolayers (SAM) on gold.

TL;DR: In this article, the direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis.

TL;DR: Graphene layers have been grown by molecular beam epitaxy (MBE) on the C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy as mentioned in this paper.