Francisco J. Ferrer

TL;DR: In this article, the direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis.

TL;DR: Graphene layers have been grown by molecular beam epitaxy (MBE) on the C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy as mentioned in this paper.

TL;DR: In this paper, the growth of Ti thin films by the magnetron sputtering technique at oblique angles and at room temperature is analyzed from both experimental and theoretical points of view, and it is shown that surface mobilization processes associated to a highly directed momentum distribution and the relatively high kinetic energy of sputtered atoms are responsible for this behavior.

TL;DR: This work reports the synthesis at room temperature of transparent and colored W(x)Si(y)O(z) thin films by magnetron sputtering (MS) from a single cathode that presented outstanding electrochromic properties characterized by a fast response, a high coloration, a complete reversibility after more than one thousand cycles and a relatively very low refractive index in the bleached state.

TL;DR: In this paper, the main radiative parameters for the 4 I 13/2 ǫ→ 4 I 15/2 transition have been obtained based on the Judd-Ofelt theory, and the split of the absorption and emission bands and the reduction of the Ω 2 parameter, as compared to the glass, confirm the presence of Er 3+ ions in a crystalline environment in glass-ceramic samples.