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Dae Hyun Kim

Researcher at Georgia Institute of Technology

Publications -  152
Citations -  3261

Dae Hyun Kim is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Dram & Three-dimensional integrated circuit. The author has an hindex of 29, co-authored 146 publications receiving 2730 citations. Previous affiliations of Dae Hyun Kim include Samsung & Seoul National University.

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Proceedings ArticleDOI

Google Workloads for Consumer Devices: Mitigating Data Movement Bottlenecks

TL;DR: This work comprehensively analyzes the energy and performance impact of data movement for several widely-used Google consumer workloads, and finds that processing-in-memory (PIM) can significantly reduceData movement for all of these workloads by performing part of the computation close to memory.
Proceedings ArticleDOI

AVATAR: A Variable-Retention-Time (VRT) Aware Refresh for DRAM Systems

TL;DR: AVATAR is proposed, a VRT-aware multirate refresh scheme that adaptively changes the refresh rate for different rows at runtime based on current VRT failures, and provides a time to failure in the regime of several tens of years while reducing refresh operations by 62%-72%.
Proceedings ArticleDOI

A study of Through-Silicon-Via impact on the 3D stacked IC layout

TL;DR: A new force-directed 3D gate-level placement that efficiently handles TSV usage, and an algorithm that assigns TSVs to nets to complete routing that involves TSVs are presented.
Proceedings ArticleDOI

ArchShield: architectural framework for assisting DRAM scaling by tolerating high error rates

TL;DR: This paper proposes ArchShield, an architectural framework that employs runtime testing to identify faulty DRAM cells and efficiently tolerate error-rates as higher as 10−4 (100x higher than ECC alone), causes less than 2% performance degradation, and still maintains 1-bit error tolerance against soft errors.