Book ChapterDOI
3D-MAPS: 3D Massively parallel processor with stacked memory
Dae Hyun Kim,Krit Athikulwongse,Michael B. Healy,Mohammad M. Hossain,Moongon Jung,Ilya Khorosh,Gokul Kumar,Young-Joon Lee,Dean L. Lewis,Tzu-Wei Lin,Chang Liu,Shreepad Panth,Mohit Pathak,Minzhen Ren,Guanhao Shen,Taigon Song,Dong Hyuk Woo,Xin Zhao,Joungho Kim,Ho Choi,Gabriel H. Loh,Hsien-Hsin Lee,Sung Kyu Lim +22 more
- pp 188-190
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TLDR
3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM.Abstract:
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1–4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM (see Fig. 10.6.1). Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5×5mm2 footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm2 power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.read more
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Proceedings ArticleDOI
NDC: Analyzing the impact of 3D-stacked memory+logic devices on MapReduce workloads
Seth H. Pugsley,Jeffrey Jestes,Huihui Zhang,Rajeev Balasubramonian,Vijayalakshmi Srinivasan,Alper Buyuktosunoglu,Al Davis,Feifei Li +7 more
TL;DR: A number of key elements necessary in realizing efficient NDC operation are described and evaluated, including low-EPI cores, long daisy chains of memory devices, and the dynamic activation of cores and SerDes links.
Proceedings ArticleDOI
NDA: Near-DRAM acceleration architecture leveraging commodity DRAM devices and standard memory modules
TL;DR: This paper proposes near-DRAM acceleration (NDA) architectures, which process data using accelerators 3D-stacked on DRAM devices comprising off-chip main memory modules, substantially reducing energy consumption and improving performance.
Journal ArticleDOI
Transparent offloading and mapping (TOM): enabling programmer-transparent near-data processing in GPU systems
Kevin Hsieh,Eiman Ebrahimi,Gwangsun Kim,Niladrish Chatterjee,Mike O'Connor,Nandita Vijaykumar,Onur Mutlu,Stephen W. Keckler +7 more
TL;DR: Extensive evaluations across a variety of modern memory-intensive GPU workloads show that TOM significantly improves performance compared to a baseline GPU system that cannot offload computation to 3D-stacked memories.
Proceedings ArticleDOI
Data reorganization in memory using 3D-stacked DRAM
TL;DR: A two pronged approach for efficient data reorganization is presented, which combines a proposed DRAM-aware reshape accelerator integrated within 3D-stacked DRAM, and a mathematical framework that is used to represent and optimize the reorganization operations.
Journal ArticleDOI
TSV stress-aware full-chip mechanical reliability analysis and optimization for 3D IC
TL;DR: An efficient and accurate full-chip thermomechanical stress and reliability analysis tool as well as a design optimization methodology to alleviate mechanical reliability issues in 3D ICs are discussed.
References
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Journal ArticleDOI
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TL;DR: This work explores more aggressive 3D DRAM organizations that make better use of the additional die-to-die bandwidth provided by 3D stacking, as well as the additional transistor count, to achieve a 1.75x speedup over previously proposed 3D-DRAM approaches on memory-intensive multi-programmed workloads on a quad-core processor.
Journal ArticleDOI
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology
Uk-Song Kang,Hoe-ju Chung,Seongmoo Heo,Soon-Hong Ahn,Hoon Lee,Sooho Cha,Jaesung Ahn,Duk-Min Kwon,Jin-Ho Kim,Jae-Wook Lee,Han-Sung Joo,Woo-Seop Kim,Hyun-Kyung Kim,Eun-Mi Lee,So-Ra Kim,Keum-Hee Ma,Dong-Hyun Jang,Nam-Seog Kim,Man-Sik Choi,Sae-Jang Oh,Jung-Bae Lee,Tae-Kyung Jung,Jei-Hwan Yoo,Chang-Hyun Kim +23 more
TL;DR: An 8 Gb 4-stack 3-D DDR3 DRAM with through-Si-via is presented which overcomes the limits of conventional modules and the proposed TSV check and repair scheme can increase the assembly yield up to 98%.
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Journal ArticleDOI
Design Issues and Considerations for Low-Cost 3-D TSV IC Technology
G. Van der Plas,Paresh Limaye,Igor Loi,Abdelkarim Mercha,Herman Oprins,C. Torregiani,Steven Thijs,Dimitri Linten,Michele Stucchi,G. Katti,Dimitrios Velenis,Vladimir Cherman,Bart Vandevelde,V. Simons,I. De Wolf,Riet Labie,D. Perry,S Bronckers,N. Minas,Miro Cupac,Wouter Ruythooren,J. Van Olmen,Alain Phommahaxay,M. de Potter de ten Broeck,A. Opdebeeck,Michal Rakowski,B. De Wachter,Morin Dehan,Marc Nelis,Rahul Agarwal,Antonio Pullini,Federico Angiolini,Luca Benini,Wim Dehaene,Youssef Travaly,Eric Beyne,Pol Marchal +36 more
TL;DR: Experimental results of a 3-D Network-on-Chip implementation demonstrate that the NoC concept can be extended from 2-D SoC to 3- D SoCs at low area and power and digital gates can directly drive signals through TSVs at high speed and low power.
Journal ArticleDOI
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