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Onur Mutlu

Researcher at ETH Zurich

Publications -  629
Citations -  42323

Onur Mutlu is an academic researcher from ETH Zurich. The author has contributed to research in topics: Dram & Computer science. The author has an hindex of 103, co-authored 543 publications receiving 34806 citations. Previous affiliations of Onur Mutlu include University of Michigan & Eindhoven University of Technology.

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Proceedings ArticleDOI

Architecting phase change memory as a scalable dram alternative

TL;DR: This work proposes, crafted from a fundamental understanding of PCM technology parameters, area-neutral architectural enhancements that address these limitations and make PCM competitive with DRAM.
Journal ArticleDOI

Flipping bits in memory without accessing them: an experimental study of DRAM disturbance errors

TL;DR: This paper exposes the vulnerability of commodity DRAM chips to disturbance errors, and shows that it is possible to corrupt data in nearby addresses by reading from the same address in DRAM by activating the same row inDRAM.
Journal ArticleDOI

Personalized copy number and segmental duplication maps using next-generation sequencing

TL;DR: An algorithm (mrFAST) is presented to comprehensively map next-generation sequence reads, which allows for the prediction of absolute copy-number variation of duplicated segments and genes, and can distinguish between different copies of highly identical genes.
Proceedings ArticleDOI

A scalable processing-in-memory accelerator for parallel graph processing

TL;DR: This work argues that the conventional concept of processing-in-memory (PIM) can be a viable solution to achieve memory-capacity-proportional performance and designs a programmable PIM accelerator for large-scale graph processing called Tesseract.
Proceedings ArticleDOI

Stall-Time Fair Memory Access Scheduling for Chip Multiprocessors

TL;DR: This paper proposes a new memory access scheduler, called the Stall-Time Fair Memory scheduler (STFM), that provides quality of service to different threads sharing the DRAM memory system and shows that STFM significantly reduces the unfairness in theDRAM system while also improving system throughput on a wide variety of workloads and systems.