D
Daesu Lee
Researcher at Pohang University of Science and Technology
Publications - 71
Citations - 3289
Daesu Lee is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 25, co-authored 67 publications receiving 2732 citations. Previous affiliations of Daesu Lee include Seoul National University & University of Wisconsin-Madison.
Papers
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Journal ArticleDOI
Giant flexoelectric effect in ferroelectric epitaxial thin films.
Daesu Lee,Aram Yoon,Seung Yup Jang,Jong-Gul Yoon,J.-S. Chung,Miyoung Kim,James F. Scott,Tae Won Noh +7 more
TL;DR: The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
Journal Article
Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
TL;DR: In this paper, a combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films.
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Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
TL;DR: In this article, the authors investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO{}_{3}$/SrRuO${}{3}µ thin-film capacitors and showed that a defective layer (possibly an oxygen-vacancyrich layer) becomes formed and disturbs carrier injection.
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Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures.
Lingfei Wang,Qiyuan Feng,Qiyuan Feng,Yoonkoo Kim,Rokyeon Kim,Ki Hoon Lee,Shawn D. Pollard,Yeong Jae Shin,Haibiao Zhou,Haibiao Zhou,Wei Peng,Daesu Lee,Wenjie Meng,Hyunsoo Yang,Jung Hoon Han,Miyoung Kim,Qingyou Lu,Qingyou Lu,Tae Won Noh +18 more
TL;DR: The discovery of ferroelectrically tunable skyrmions in ultrathin BaTiO3/SrRuO3 bilayer heterostructures is reported and can simultaneously enhance the integratability and addressability ofskyrmion-based functional devices.
Journal ArticleDOI
Emergence of room-temperature ferroelectricity at reduced dimensions
Daesu Lee,Haidong Lu,Yijia Gu,Si-Young Choi,S.-D. Li,Sangwoo Ryu,Tula R. Paudel,Kyung Song,Evgeny Mikheev,Sanghan Lee,Susanne Stemmer,Dmitri A. Tenne,Sang Ho Oh,Evgeny Y. Tsymbal,Xifan Wu,Long Qing Chen,Alexei Gruverman,Chang-Beom Eom +17 more
TL;DR: It is shown that electrically induced alignment of naturally existing polar nanoregions is responsible for the appearance of a stable net ferroelectric polarization in these films and can be useful for the development of low-dimensional material systems with enhanced functional properties relevant to emerging nanoelectronic devices.