Quantum dots embedded in photonics nanostructures provide unprecedented control over the interaction between light and matter. This review gives an overview of the theoretical principles involved, as well as applications ranging from high-precision quantum electrodynamics experiments to quantum-information processing.

Interfacing single photons and single quantum dots with photonic nanostructures

Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals’ lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control
of optical quantum systems.

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Lasers and LEDs have a statistical distribution in the number of photons emitted within a given time interval. Applications exploiting the quantum properties of light require sources for which either individual photons, or pairs, are generated in a regulated stream. Here we review recent research on single-photon sources based on the emission of a single semiconductor quantum dot. In just a few years remarkable progress has been made in generating indistinguishable single photons and entangled-photon pairs using such structures. This suggests that it may be possible to realize compact, robust, LED-like semiconductor devices for quantum light generation.

https://www.dsf.unica.it/EOG/teaching/presentazioneoptoelettronica/shields_review_natphoton07.pdf

Semiconductor quantum light sources

The quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied. The electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state (∼10 5 cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angstroms), in the presence of randomly oriented local electric fields that change over time. These local fields result in spontaneous spectral diffusion and contribute to ensemble inhomogeneous broadening. Stark shifts of the lowest excited state more than two orders of magnitude larger than the linewidth were observed, suggesting the potential use of these dots in electro-optic modulation devices.

Quantum Confined Stark Effect in Single CdSe Nanocrystallite Quantum Dots

A quantum emitter efficiently coupled to a nanophotonic waveguide constitutes a promising system for the realization of single-photon transistors, quantum-logic gates based on giant single-photon nonlinearities, and high bit-rate deterministic single-photon sources. The key figure of merit for such devices is the β factor, which is the probability for an emitted single photon to be channeled into a desired waveguide mode. We report on the experimental achievement of β=98.43%±0.04% for a quantum dot coupled to a photonic crystal waveguide, corresponding to a single-emitter cooperativity of η=62.7±1.5. This constitutes a nearly ideal photon-matter interface where the quantum dot acts effectively as a 1D "artificial" atom, since it interacts almost exclusively with just a single propagating optical mode. The β factor is found to be remarkably robust to variations in position and emission wavelength of the quantum dots. Our work demonstrates the extraordinary potential of photonic crystal waveguides for highly efficient single-photon generation and on-chip photon-photon interaction.

Near-unity coupling efficiency of a quantum emitter to a photonic crystal waveguide.

The effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.

/pdf/in-ga-as-self-assembled-quantum-ring-formation-by-molecular-3ys40cxmcq.pdf

In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.

/pdf/manipulating-exciton-fine-structure-in-quantum-dots-with-a-2knpkmzmf1.pdf

Manipulating exciton fine structure in quantum dots with a lateral electric field

We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural properties determined by cross-sectional scanning tunneling microscopy measurements. The observed oscillation magnitude of the magnetic moment per electron is remarkably large for the topology of our nanostructures, which are singly connected and exhibit a pronounced shape asymmetry.

/pdf/oscillatory-persistent-currents-in-self-assembled-quantum-20fm3othtq.pdf

Oscillatory persistent currents in self-assembled quantum rings.

We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning tunneling microscopy (X-STM) deviate substantially from the ring-shaped islands as observed by atomic force microscopy on the surface of uncapped QR structures. We show unambiguously that X-STM images the remaining quantum dot material whereas the AFM images the erupted quantum dot material. The remaining dot material shows an asymmetric indium-rich crater-like shape with a depression rather than an opening at the center and is responsible for the observed electronic properties of QR structures. These quantum craters have an indium concentration of about 55% and a diameter of about 20nm which is consistent with the observed electronic radius of QR structures.

/pdf/atomic-scale-structure-of-self-assembled-in-ga-as-quantum-1e09y3l9xw.pdf

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Room temperature photoluminescence at 1.6μm is demonstrated from InGaAs quantum dots capped with an 8nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.

/pdf/room-temperature-emission-at-1-6mm-from-ingaas-quantum-dots-4yvsrqpwt7.pdf

Daniel Granados

Papers

In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

Manipulating exciton fine structure in quantum dots with a lateral electric field

Oscillatory persistent currents in self-assembled quantum rings.

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb