P
PM Paul Koenraad
Researcher at Eindhoven University of Technology
Publications - 300
Citations - 5870
PM Paul Koenraad is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Quantum dot & Scanning tunneling microscope. The author has an hindex of 37, co-authored 300 publications receiving 5403 citations. Previous affiliations of PM Paul Koenraad include AeA & Utrecht University.
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Single dopants in semiconductors
TL;DR: The huge advances in the past decade towards observing, controllably creating and manipulating single dopants, as well as their application in novel devices which allow opening the new field of solotronics (solitary dopant optoelectronics).
Journal ArticleDOI
Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
DM Dominique Bruls,J. W. A. M. Vugs,PM Paul Koenraad,H.W.M. Salemink,JH Joachim Wolter,Mark Hopkinson,M. S. Skolnick,Fei Long,Simon P.A. Gill +8 more
TL;DR: In this paper, a cross-sectional scanning-tunneling microscopy investigation of the shape, size and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate, is presented.
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Oscillatory persistent currents in self-assembled quantum rings.
Najm Niek Kleemans,I.M.A. Bominaar-Silkens,Vladimir M. Fomin,Vladimir M. Fomin,V. N. Gladilin,Daniel Granados,Alfonso G. Taboada,Jorge M. Garcia,Peter Offermans,Uli Zeitler,Pcm Christianen,Jan C. Maan,J. T. Devreese,J. T. Devreese,PM Paul Koenraad +14 more
TL;DR: The first Aharonov-Bohm oscillation is measured at a field of 14 T, in perfect agreement with the model based on the structural properties determined by cross-sectional scanning tunneling microscopy measurements.
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Controlled charge switching on a single donor with a scanning tunneling microscope
K. Teichmann,Martin Wenderoth,Sebastian Loth,Rainer G. Ulbrich,J. K. Garleff,A. P. Wijnheijmer,PM Paul Koenraad +6 more
TL;DR: The Coulomb potential of a single donor at the semiconductor-vacuum interface is mapped by utilizing the controlled manipulation of individually addressable impurities in semiconductor material.
Journal ArticleDOI
Spatial structure of an individual Mn acceptor in GaAs.
A. M. Yakunin,A. Yu. Silov,PM Paul Koenraad,JH Joachim Wolter,W. Van Roy,J. De Boeck,Jian-Ming Tang,Michael E. Flatté +7 more
TL;DR: It is demonstrated that anisotropy arising from the cubic symmetry of the GaAs crystal produces the crosslike shape for the hole wave function, and the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.