The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Nanoscale wires and related devices

Vibrations of carbon nanotubes and their composites: a review

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Starting from the equivalence theorem any composite metallic and dielectric structure can be analyzed by using SIE (surface integral equations). Such integral equations are usually solved by MoM (method of moments). Most of the existing MoM methods for solving SIE are developed for BORs (bodies of revolution). There are only few such methods that can handle structures of arbitrary shape. These methods use sub-domain basis functions defined over triangles, requiring a very large number of unknowns even for the simplest problems. This paper presents a new MoM method for electromagnetic modeling of composite metallic and dielectric structures. The method uses entire-domain basis functions defined over bilinear surfaces, resulting in a remarkably small number of unknowns.

/pdf/electromagnetic-modeling-of-composite-metallic-and-2fa1k59cuz.pdf

Electromagnetic Modeling of Composite Metallic and Dielectric Structures

Two novel high gain deployable retlectarray antennas to support CubeSat telecommunicatio ns are described and compared with other high gain CubeSat antenna technologies. The first retlectarray is the Integrated Solar Array and Retlectarray Antenna (ISARA), a KIKa-band antenna that also incorporates a dense packing of solar cells used to provide electrical power for the spacecraft. The second is an X-band retlectarray designed to provide a bent pipe telecom link. These retlectarrays are ideal for CubeSat applications because they require negligible stowed and impose a modest mass increase. The antenna designs and measured performance results are presented. Index Terms -Antenna, retlectarray, telecommunicatio ns, CubeSat, solar array

for CubeSat Communications

Problems associated with spurious mode generation in the proposed Ka-Band gyroklystron transmitter tube, overmoded transmission line, and feed are discussed. A brief description of the overall problem is presented. The theory used to evaluate feed and antenna performance when spurious modes are present is given. Results for feed patterns and overall antenna patterns for various levels and types of spurious modes are presented. Worst case antenna efficiency is calculated as a function of spurious mode level. Conclusions are drawn regarding the results of this study and their application to specifications on the transmitter tube and transmission line system.

The Effects of Mode Impurity of Ka-band System Performance

An analytical description of the scattered light from a 10 meter diameter Diffractive Optical Element lens-based telescope operating at 1 micron wavelength has been formulated. The specifics of the grating and blaze as well as physical manufacturing constraints were made a part of the problem to be solved. A major simplifying approximation made is that a 1 dimensional lens was assumed for the calculations. This simplified model still serves to illustrate the important effects and limitations of a high performance lens used as a telescope. Focal plane light scattering has been rigorously determined for simplified cases.

Application of a large space-based diffractive optical element telescope to the Terrestrial Planet-Finder mission: design and tolerance issues

Astronomers have discovered over 150 planets orbiting other stars. NASA mission; Find and characterize terrestrial (or rocky) exo-planets that might harbor life (like Earth)liquid water on the planet (habitable zone). An atmosphere that indicates the presence of life water, oxygen, ozone, carbon dioxide, chlorophyll, and methane. Two missions under development: A coronagraph and an interferometer.

Terrestrial Planet Finder Coronagraph overview of technology development & system design

Strut shaping of NASA's Deep Space Network (DSN) 34m Beam Waveguide (BWG) antenna has been implemented to reduce near-field RF exposure while improving the antenna noise temperature. Strut shaping was achieved by introducing an RF shield that does not compromise the structural integrity of the existing antenna. Reduction in the RF near-field level will compensate for the planned transmit power increase of the antenna from 20 kW to 80 kW while satisfying safety requirements for RF exposure. Measured antenna noise temperature was also improved by as much as 1.5 K for the low elevation angles and 0.5 K in other areas.

Daniel J. Hoppe

Papers

for CubeSat Communications

The Effects of Mode Impurity of Ka-band System Performance

Application of a large space-based diffractive optical element telescope to the Terrestrial Planet-Finder mission: design and tolerance issues

Terrestrial Planet Finder Coronagraph overview of technology development & system design

Strut shaping of 34m Beam Waveguide antenna for reductions in near-field RF and noise temperature