Daniel Lemus

TL;DR: In this article, the coherent and incoherent transport simulation capabilities of the multipurpose nanodevice simulation tool NEMO5 are presented and applied on transport in tunneling field effect transistors.

TL;DR: In this paper, the suitability of a mode space tight binding algorithm to various III-V homo-and heterojunction nanowire devices was explored, and the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature.

TL;DR: In this article, the authors extended the atomistic mode space approach to include inelastic scattering on optical and acoustic phonons in silicon nanowires, and the exact calculation of the real part of retarded scattering self-energies in the reduced basis representation using the Kramers-Kronig relations was presented.

TL;DR: In this paper, the authors extended the atomistic mode space approach to include inelastic scattering on optical and acoustic phonons in silicon nanowires, and calculated the real part of retarded scattering self-energies in the reduced basis representation using the Kramers-Kronig relations.

TL;DR: Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.