H
Hesameddin Ilatikhameneh
Researcher at Purdue University
Publications - 89
Citations - 2451
Hesameddin Ilatikhameneh is an academic researcher from Purdue University. The author has contributed to research in topics: Transistor & Heterojunction. The author has an hindex of 27, co-authored 89 publications receiving 2126 citations. Previous affiliations of Hesameddin Ilatikhameneh include Sharif University of Technology & Samsung.
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Journal ArticleDOI
Electrically Tunable Bandgaps in Bilayer MoS2
TL;DR: A continuous bandgap tuning in bilayer MoS2 is demonstrated using a dual-gated field-effect transistor (FET) and photoluminescence (PL) spectroscopy and Density functional theory is employed to calculate the field dependent band structures, attributing the widely tunable bandgap to an interlayer direct bandgap transition.
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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh,Yaohua Tan,Bozidar Novakovic,Gerhard Klimeck,Rajib Rahman,Joerg Appenzeller +5 more
TL;DR: In this article, the performance of tunnel field effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations.
Journal ArticleDOI
Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh,Yaohua Tan,Bozidar Novakovic,Gerhard Klimeck,Rajib Rahman,Joerg Appenzeller +5 more
TL;DR: In this paper, the performance of tunnel field effect transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations.
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Efficient and realistic device modeling from atomic detail to the nanoscale
James Fonseca,Tillmann Kubis,Michael Povolotskyi,Bozidar Novakovic,Arvind Ajoy,Ganesh Hegde,Hesameddin Ilatikhameneh,Zhengping Jiang,Parijat Sengupta,Yaohua Tan,Gerhard Klimeck +10 more
TL;DR: NEMO5 as discussed by the authors is a modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena.
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Complementary Black Phosphorus Tunneling Field-Effect Transistors.
Peng Wu,Tarek A. Ameen,Huairuo Zhang,Leonid A. Bendersky,Hesameddin Ilatikhameneh,Gerhard Klimeck,Rajib Rahman,Albert V. Davydov,Joerg Appenzeller +8 more
TL;DR: Two complementary TFETs based on few-layer black phosphorus are demonstrated, in which multiple top gates create electrostatic doping in the source and drain regions, and atomistic simulations of the fabricated devices agree quantitatively with the current-voltage measurements.